PART |
Description |
Maker |
GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
GS864018T-167IV GS864018T-167V GS864018T-200IV GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864218B-167IV GS864218B-167V GS864218B-200IV GS8 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8642ZV36GB-250I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
GS8642ZV18B-300I GS8642ZV18B-167I GS8642ZV18GB-167 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-F |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS864436E-166V GS864418E-150 GS864418E-225 GS86443 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|